JPH0420263B2 - - Google Patents

Info

Publication number
JPH0420263B2
JPH0420263B2 JP58147524A JP14752483A JPH0420263B2 JP H0420263 B2 JPH0420263 B2 JP H0420263B2 JP 58147524 A JP58147524 A JP 58147524A JP 14752483 A JP14752483 A JP 14752483A JP H0420263 B2 JPH0420263 B2 JP H0420263B2
Authority
JP
Japan
Prior art keywords
layer
film
base
silicon film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58147524A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6037774A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58147524A priority Critical patent/JPS6037774A/ja
Publication of JPS6037774A publication Critical patent/JPS6037774A/ja
Publication of JPH0420263B2 publication Critical patent/JPH0420263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58147524A 1983-08-10 1983-08-10 半導体装置の製造方法 Granted JPS6037774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147524A JPS6037774A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147524A JPS6037774A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6037774A JPS6037774A (ja) 1985-02-27
JPH0420263B2 true JPH0420263B2 (en]) 1992-04-02

Family

ID=15432260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147524A Granted JPS6037774A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6037774A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド セミコンダクタ コーポレーション トランジスタ用の自己整合型ベース分路
JPH0611049B2 (ja) * 1987-03-24 1994-02-09 日本電気株式会社 半導体装置の製造方法
JP3055781B2 (ja) * 1988-07-12 2000-06-26 セイコーエプソン株式会社 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6037774A (ja) 1985-02-27

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